Semiconductor storage device and method for manufacturing the semiconductor storage device

ABSTRACT

A semiconductor-storage-device manufacturing method of the present invention is a method for manufacturing a semiconductor storage device provided with a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode, and the method includes a step of embedding a first metal plug and a second metal plug in an insulating layer; a step of forming a covering layer that covers at least the second metal plug while securing a part that comes into electric contact with the first metal plug; a step of forming a deposit structure by sequentially depositing a material for the lower electrode, a material for the ferroelectric film, and a material for the upper electrode after forming the covering layer; and a step of forming the ferroelectric capacitor by etching and removing other parts except a part of the deposit structure such that the part of the deposit structure remains on the first metal plug.

This is a Continuation of U.S. application Ser. No. 13/119,070, filed onMar. 15, 2011, and allowed on Nov. 14, 2014, which was a National Stageapplication of PCT/JP2009/004653, filed Sep. 16, 2009, the subjectmatters of which are incorporated herein by reference.

TECHNICAL FIELD

This invention relates to a semiconductor storage device and a methodfor manufacturing the semiconductor storage device.

BACKGROUND ART

A ferroelectric memory (FeRAM: Ferroelectric Random Access Memory)including a ferroelectric capacitor is conventionally known as anonvolatile memory capable of retaining its memory contents even when apower supply is turned off. Conventional ferroelectric memories aremanufactured through, for example, the following manufacturing process.

FIG. 7A to FIG. 7H are schematic sectional views of a conventionalferroelectric-memory manufacturing method shown in process sequence inwhich a ferroelectric memory is produced.

In this manufacturing method, first, an N type impurity is injected intoa surface part of a P type silicon substrate 201 as shown in FIG. 7A,and, as a result, an N⁺ type region 202 and N⁺ type region 203 areformed. Thereafter, thermal oxidation and patterning are performed, and,as a result, a gate insulating film 204 extending like a bridge from theN⁺ type region 202 to the N type region 203 is formed on the surface ofthe silicon substrate 201. Thereafter, polysilicon (doped polysilicon)densely doped with an impurity is deposited on the silicon substrate 201by a CVD method, is then subjected to patterning, and, as a result, agate electrode 205 is formed on the gate insulating film 204.Thereafter, by the CVD method, silicon oxide is deposited on the siliconsubstrate 201, is then subjected to etchback, and, as a result, asidewall 206 surrounding a side wall of the gate electrode 205 isformed. In this way, a MOSFET 207 including the gate electrode 205(Metal), the gate insulating film 204 (Oxide), the silicon substrate 201(Semiconductor) having the N⁺ type region 202 (Drain region) and the N⁺type region 203 (Source region) is formed as shown in FIG. 7A.

After forming the MOSFET 207, a first insulating layer 208 made ofsilicon oxide is stacked on the silicon substrate 201 by the CVD method.Thereafter, the first insulating layer 208 is subjected to patterning.As a result, a drain contact hole 209 leading from the upper surface ofthe first insulating layer 208 to the N⁺ type region 202 (Drain region)is formed. Additionally, a source contact hole 210 leading from theupper surface of the first insulating layer 208 to the N⁺ type region203 (Source region) is formed.

Thereafter, by the sputtering method, a conductive material thatcontains titanium is deposited such that the inner surface of the draincontact hole 209 and the inner surface of the source contact hole 210are covered with the conductive material and such that the upper surfaceof the first insulating layer 208 is covered therewith. Thereafter, bythe CVD method, tungsten is deposited such that the drain contact hole209 and the source contact hole 210 are filled with this tungsten.Thereafter, the conductive material that contains titanium and thetungsten material are polished by CMP treatment until the upper surfaceof the tungsten material and the upper surface of the first insulatinglayer 208 become flush with each other. In this way, a drain contactplug 213 embedded in the drain contact hole 209 is formed via a barrierfilm 211 as shown in FIG. 7A. Additionally, a source contact plug 214embedded in the source contact hole 210 is formed via a barrier film212. The drain contact plug 213 is brought into electric contact withthe N⁺ type region 202 (Drain region) via the barrier film 211. On theother hand, the source contact plug 214 is brought into electric contactwith the N⁺ type region 203 (Source region) via the barrier film 212.

Thereafter, by the sputtering method, a lower conductive material film215 made of a conductive material that contains Ir (iridium), aferroelectric material film 216 made of PZT (titanic acid leadzirconate), and an upper conductive material film 217 made of aconductive material that contains Ir (iridium) are stacked in this orderon the first insulating layer 208 as shown in FIG. 7B. As a result, alayered structure 239 is formed on the first insulating layer 208.

Thereafter, as shown in FIG. 7C, a hard mask 240 made of TiN is formedat a part of the layered structure 239 located on the drain contact plug213. Thereafter, the layered structure 239 is etched via this hard mask240 at an etching temperature of 300° C. or more. In this way, aferroelectric capacitor 221 consisting of the lower electrode 218, theferroelectric film 219, and the upper electrode 220 is formed on thedrain contact plug 213. The lower electrode 218 of the ferroelectriccapacitor 221 comes into contact with the drain contact plug 213, and,as a result, is electrically connected to the N⁺ type region 202 (Drainregion) via the drain contact plug 213. The hard mask 240 that has beenthinned by etching remains on the upper electrode 220.

Thereafter, alumina is deposited on the first insulating layer 208 bythe sputtering method, and, in addition, SiN is deposited thereon by thePECVD method. As a result, as shown in FIG. 7D, a first hydrogen barrierfilm 222 and a second hydrogen barrier film 223 are formed to protectthe ferroelectric capacitor 221 from hydrogen.

Thereafter, by the CVD method, a second insulating layer 224 made ofsilicon oxide is stacked on the second hydrogen barrier film 223 asshown in FIG. 7E.

Thereafter, the second insulating layer 224 is polished by CMPtreatment, and the upper surface of the second insulating layer 224 isflattened. Thereafter, as shown in FIG. 7F, the second insulating layer224, the second hydrogen barrier film 223, and the first hydrogenbarrier film 222 are subjected to patterning. As a result, a PL wiringvia-hole 225 leading from the upper surface of the second insulatinglayer 224 to the hard mask 240 is formed. Additionally, a BL wiringvia-hole 226 leading from the upper surface of the second insulatinglayer 224 to the source contact plug 214 is formed.

Thereafter, by the sputtering method, a conductive material thatcontains titanium is deposited such that the inner surface of the PLwiring via-hole 225 and the inner surface of the BL wiring via-hole 226are covered therewith and such that the upper surface of the secondinsulating layer 224 is covered therewith. Thereafter, by the CVDmethod, tungsten is deposited such that the PL wiring via-hole 225 andthe BL wiring via-hole 226 are filled therewith. Thereafter, theconductive material that contains titanium and the tungsten material arepolished by CMP treatment until the upper surface of the tungstenmaterial and the upper surface of the second insulating layer 224 becomeflush with each other. In this way, as shown in FIG. 7G, a PL wiringplug 229 embedded in the PL wiring via-hole 225 is formed via thebarrier film 227. Additionally, a BL wiring plug 230 embedded in the BLwiring via-hole 226 is formed via the barrier film 228. The PL wiringplug 229 is brought into electric contact with the upper electrode 220via the barrier film 227 and the hard mask 240. On the other hand, theBL wiring plug 230 is brought into electric contact with the sourcecontact plug 214 via the barrier film 228.

Thereafter, by the sputtering method, a conductive material thatcontains titanium, a conductive material that contains aluminum, and aconductive material that contains titanium are stacked on the secondinsulating layer 224, and are subjected to patterning. As a result, a PLwiring 231 (i.e., a wiring that has a three-layer structure consistingof a titanium layer 233, an aluminum layer 234, and a titanium layer235) that is brought into electric contact with the PL wiring plug 229and a BL wiring 232 (i.e., a wiring that has a three-layer structureconsisting of a titanium layer 236, an aluminum layer 237, and atitanium layer 238) that is brought into electric contact with the BLwiring plug 230 are formed as shown in FIG. 7H.

Thereafter, a word line 241 is connected to the gate electrode 205, anda plate line 242 is connected to the PL wiring 231, and a bit line 243is connected to the BL wiring 232.

In this way, the ferroelectric memory 200 including the ferroelectriccapacitor 221 can be obtained as shown in FIG. 7H.

PRIOR ART DOCUMENTS Patent Literatures

Patent Literature 1: Japanese Published Patent Application No.2004-153019

BRIEF SUMMARY OF THE INVENTION Problems to be Solved by the Invention

In recent years, the miniaturization of ferroelectric memories has beenadvanced, and, for example, a ferroelectric memory has been intended tobe miniaturized by reducing the area (i.e., capacitor area) of aferroelectric capacitor provided in the memory.

Ir and Pt, each of which is used as a material for lower electrodes andupper electrodes, and PZT, which is used as a material for ferroelectricfilms, are not easily etched. Therefore, under normal dry etchingconditions, the side surface of the ferroelectric capacitor becomesoblique without becoming vertical with respect to the stacked-layerinterface even if a layered structure formed by stacking alower-electrode material, a ferroelectric-film material, and anupper-electrode material on each other is etched in a verticaldirection. If this side surface of the ferroelectric capacitor can bearranged to be substantially vertical with respect to the stacked-layerinterface, the capacitor area can be reduced without lowering thecapacity of the ferroelectric capacitor.

Therefore, a possible technique has been proposed for subjecting thelayered structure 239 to high-temperature etching (e.g., etchingperformed at a temperature of 300° C. or more) via the hard mask 240having heat-resisting properties. According to this technique, it ispossible to form the ferroelectric capacitor 221 having a steeplyoblique side surface that is substantially vertical with respect to thestacked-layer interface.

However, there is an abnormal etching case in which, duringhigh-temperature etching, the source contact plug 214 disposed below ato-be-etched part of the layered structure 239 is etched together withthe layered structure 239. If the source contact plug 214 undergoesabnormal etching, an electrical conduction failure will occur betweenthe source contact plug 214 and the BL wiring plug 230, and, as aresult, the reliability of the ferroelectric memory 200 will decrease.

It is an object of the present invention to provide a semiconductorstorage device capable of achieving miniaturization without abnormallyetching a second metal plug differing from a first metal plug connectedto a ferroelectric capacitor, and to provide a method for manufacturingthe semiconductor storage device.

Means for Solving the Problems

A semiconductor storage device according to an aspect of the presentinvention includes an insulating layer; a ferroelectric capacitor formedon the insulating layer, the ferroelectric capacitor including a lowerelectrode, a ferroelectric film, and an upper electrode; an interlayerinsulating film formed on the insulating layer, the interlayerinsulating film having an opening at a part thereof at which theferroelectric capacitor is disposed; a first metal plug embedded in theinsulating layer and connected to the lower electrode via the opening;and a second metal plug embedded in the insulating layer outside theferroelectric capacitor when viewed planarly.

This semiconductor storage device can be manufactured by, for example, asemiconductor-storage-device manufacturing method of the presentinvention, and the manufacturing method is a method for manufacturing asemiconductor storage device provided with a ferroelectric capacitorincluding a lower electrode, a ferroelectric film, and an upperelectrode, and the method includes a step of embedding a first metalplug and a second metal plug in an insulating layer; a step of forming acovering layer that covers at least the second metal plug while securinga part that comes into electric contact with the first metal plug; astep of forming a deposit structure by sequentially depositing amaterial for the lower electrode, a material for the ferroelectric film,and a material for the upper electrode after forming the covering layer;and a step of forming the ferroelectric capacitor by etching andremoving other parts except a part of the deposit structure such thatthe part of the deposit structure remains on the first metal plug.

Specifically, the semiconductor storage device can be manufactured by amethod for manufacturing a semiconductor storage device provided with aferroelectric capacitor including a lower electrode, a ferroelectricfilm, and an upper electrode, and the method includes a step ofembedding a first metal plug and a second metal plug in an insulatinglayer; a step of forming an interlayer insulating film on the insulatinglayer; a step of forming an opening in the interlayer insulating film,the first metal plug being exposed by the opening; a step of forming adeposit structure by sequentially depositing a material for the lowerelectrode, a material for the ferroelectric film, and a material for theupper electrode after forming the opening; and a step of etching andremoving other parts except a part of the deposit structure such thatthe part of the deposit structure remains on the opening.

In this method, the first metal plug and the second metal plug areembedded in the insulating layer, and then the interlayer insulatingfilm is formed on the insulating layer. An opening by which the firstmetal plug is exposed is formed in the interlayer insulating film. As aresult, the first metal plug is exposed via the opening of theinterlayer insulating film, whereas the second metal plug is coveredwith the interlayer insulating film.

In this state, a part of the deposit structure formed on the interlayerinsulating film (i.e., other parts except a part thereof remaining onthe opening of the interlayer insulating film) is removed by etching,and, as a result, a ferroelectric capacitor is formed.

When the deposit structure is etched, the second metal plug is coveredwith the interlayer insulating film. Therefore, protection given by theinterlayer insulating film makes it possible to prevent the second metalplug from being abnormally etched even if the deposit structure isetched at a high temperature. As a result, it is possible to inhibit theoccurrence of an electrical conduction failure between the second metalplug and a connection element connected to this second metal plug, andit is possible to restrain a decrease in reliability.

Additionally, the deposit structure is etched at a high temperature,and, as a result, the side surface of the ferroelectric capacitor thatappears by performing etching can be set as a vertical surface or asteeply oblique surface that is almost a vertical surface with respectto the stacked-layer interface of the ferroelectric capacitor. As aresult, the area of the ferroelectric capacitor can be reduced, andtherefore the semiconductor storage device can be miniaturized.

Additionally, preferably, in the semiconductor storage device, an uppersurface of the first metal plug and an upper surface of the second metalplug are flush with each other.

In this case, the semiconductor storage device can be manufactured by,for example, a method for manufacturing the semiconductor storagedevice, in which the step of embedding the first metal plug and thesecond metal plug in the insulating layer includes a step of forming afirst through-hole and a second through-hole in the insulating layer; astep of depositing a plug material on the insulating layer in such a wayas to fill the first through-hole and the second through-hole therewith;and a step of forming the first metal plug and the second metal plug byremoving a remaining plug material except the plug material of the firstthrough-hole and the plug material of the second through-hole until anupper surface of the plug material and an upper surface of theinsulating layer become flush with each other.

In this method, the first through-hole and the second through-hole areformed, and a plug material is deposited in such a way as to fill thesethrough-holes therewith, and then this plug material is partiallyremoved until the upper surface of the plug material and the uppersurface of the insulating layer become flush with each other. As aresult, the first metal plug and the second metal plug that are flushwith each other are formed.

A plurality of steps of forming the first metal plug and a plurality ofsteps of forming the second metal plug are performed in parallel witheach other as described above, and therefore the manufacturing processof the semiconductor storage device can be simplified.

A semiconductor storage device according to another aspect of thepresent invention includes an insulating layer having a firstthrough-hole and a second through-hole; a ferroelectric capacitor formedon the insulating layer such that the first through-hole is coveredtherewith, the ferroelectric capacitor including a lower electrode, aferroelectric film, and an upper electrode; a first metal plug embeddedin the first through-hole and brought into electric contact with thelower electrode; a second metal plug embedded in the secondthrough-hole; and a conductive cap with which an upper surface of atleast the second metal plug of the first metal plug and the second metalplug is covered, the conductive cap made of a conductive material havingan etching selection ratio with respect to a material for the lowerelectrode and a material for the upper electrode.

According to this structure, an upper surface of at least the secondmetal plug of the first and second metal plugs is covered with aconductive cap made of a conductive material having an etching selectionratio with respect to a material for the lower electrode and a materialfor the upper electrode. The upper surface of the second metal plug isprotected by the conductive cap by being covered with the conductivecap.

Therefore, protection given by the conductive cap makes it possible toprevent the second metal plug from being abnormally etched even if thelower electrode, the ferroelectric film, and the upper electrode aremolded at a high temperature. As a result, it is possible to inhibit theoccurrence of an electrical conduction failure between the second metalplug and a connection element connected to this second metal plug, andit is possible to restrain a decrease in reliability.

Additionally, the ferroelectric capacitor is formed by molding the lowerelectrode, the ferroelectric film, and the upper electrode at a hightemperature, and, as a result, the side surface of the ferroelectriccapacitor that appears by performing etching can be set as a verticalsurface or a steeply oblique surface that is almost a vertical surfacewith respect to the stacked-layer interface of the ferroelectriccapacitor. As a result, the area of the ferroelectric capacitor can bereduced, and therefore the semiconductor storage device can beminiaturized.

This semiconductor storage device can be manufactured by, for example, asemiconductor-storage-device manufacturing method of the presentinvention, and the manufacturing method is a method for manufacturing asemiconductor storage device provided with a ferroelectric capacitorincluding a lower electrode, a ferroelectric film, and an upperelectrode, and the method includes a step of embedding a first metalplug and a second metal plug in an insulating layer; a step of forming acovering layer that covers at least the second metal plug while securinga part that comes into electric contact with the first metal plug; astep of forming a deposit structure by sequentially depositing amaterial for the lower electrode, a material for the ferroelectric film,and a material for the upper electrode after forming the covering layer;and a step of forming the ferroelectric capacitor by etching andremoving other parts except a part of the deposit structure such thatthe part of the deposit structure remains on the first metal plug.

Additionally, preferably, in the semiconductor storage device, theconductive cap is made of conductive nitride.

The conductive nitride used for the conductive cap has a great etchingselection ratio with respect to the lower electrode and the upperelectrode each of which is made of, for example, a conductive materialthat contains a noble metal (specifically, Au-based material, Ag-basedmaterial, Pt-based material, Pd-based material, Rh-based material,Ir-based material, Ru-based material, and Os-based material). Therefore,in this aspect, the second metal plug can be effectively prevented frombeing abnormally etched.

Additionally, preferably, in the semiconductor storage device, the firstmetal plug and the second metal plug are buried to a middle part of thefirst through-hole and a middle part of the second through-hole,respectively, and the conductive cap is embedded in the firstthrough-hole and in the second through-hole in such a way as to becomeflush with a surface of the insulating layer.

According to this structure, the first metal plug and the conductive capare embedded in the first through-hole. Additionally, the second metalplug and the conductive cap are embedded in the second through-hole. Inother words, a structure embedded in the first through-hole and astructure embedded in the second through-hole are identical with eachother.

Therefore, the semiconductor storage device according to this aspect canbe manufactured by, for example, a method for manufacturing asemiconductor storage device provided with a ferroelectric capacitorincluding a lower electrode, a ferroelectric film, and an upperelectrode, and the method includes a step of forming a firstthrough-hole and a second through-hole in the insulating layer; a stepof filling the first through-hole and the second through-hole with ametallic material; a step of forming a first metal plug buried to amiddle part of the first through-hole and a second metal plug buried toa middle part of the second through-hole by partially removing themetallic material by etching; a step of forming a conductive plug thatcovers the upper surface of the first metal plug and the upper surfaceof the second metal plug by filling the first through-hole and thesecond through-hole with a conductive material having an etchingselection ratio with respect to the material for the lower electrode andthe material for the upper electrode after forming the first metal plugand the second metal plug; a step of forming a deposit structure bysequentially depositing a material for the lower electrode, a materialfor the ferroelectric film, and a material for the upper electrode onthe insulating layer; and a step of forming the ferroelectric capacitorby etching and removing other parts except a part of the depositstructure such that the part of the deposit structure remains on thefirst metal plug.

In this manufacturing method, each of the first through-hole and thesecond through-hole is filled with a metallic material, and then themetallic material in each of these through-holes is partially removed,and, as a result, the first metal plug and the second metal plug areformed. After forming these plugs, the first through-hole and the secondthrough-hole are filled with a conductive material having an etchingselection ratio with respect to the lower electrode and the upperelectrode, and, as a result, a conductive plug with which the uppersurface of the first metal plug and the upper surface of the secondmetal plug are covered and that is flush with the surface of theinsulating layer is formed.

In this way, the step of forming the first metal plug and the step offorming the second metal plug are performed in parallel with each other,and, likewise, the steps of forming conductive plugs with which theupper surfaces of these plugs are respectively covered are performed inparallel with each other, and therefore the manufacturing process of thesemiconductor storage device can be simplified.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic plan view of a ferroelectric memory according to afirst embodiment of the present invention.

FIG. 2 is a sectional view of the ferroelectric memory of FIG. 1 alongcutting-plane line II-II.

FIG. 3A is a schematic sectional view of a method for manufacturing theferroelectric memory of FIG. 2 shown in process sequence.

FIG. 3B is a sectional view showing a step subsequent to that of FIG.3A.

FIG. 3C is a sectional view showing a step subsequent to that of FIG.3B.

FIG. 3D is a sectional view showing a step subsequent to that of FIG.3C.

FIG. 3E is a sectional view showing a step subsequent to that of FIG.3D.

FIG. 3F is a sectional view showing a step subsequent to that of FIG.3E.

FIG. 3G is a sectional view showing a step subsequent to that of FIG.3F.

FIG. 3H is a sectional view showing a step subsequent to that of FIG.3G.

FIG. 3I is a sectional view showing a step subsequent to that of FIG.3H.

FIG. 3J is a sectional view showing a step subsequent to that of FIG.3I.

FIG. 4 is a schematic plan view of a ferroelectric memory according to asecond embodiment of the present invention.

FIG. 5 is a sectional view of the ferroelectric memory of FIG. 4 alongcutting-plane line V-V.

FIG. 6A is a schematic sectional view of a method for manufacturing theferroelectric memory of FIG. 5 shown in process sequence.

FIG. 6B is a sectional view showing a step subsequent to that of FIG.6A.

FIG. 6C is a sectional view showing a step subsequent to that of FIG.6B.

FIG. 6D is a sectional view showing a step subsequent to that of FIG.6C.

FIG. 6E is a sectional view showing a step subsequent to that of FIG.6D.

FIG. 6F is a sectional view showing a step subsequent to that of FIG.6E.

FIG. 6G is a sectional view showing a step subsequent to that of FIG.6F.

FIG. 6H is a sectional view showing a step subsequent to that of FIG.6G.

FIG. 6I is a sectional view showing a step subsequent to that of FIG.6H.

FIG. 6J is a sectional view showing a step subsequent to that of FIG.6I.

FIG. 6K is a sectional view showing a step subsequent to that of FIG.6J.

FIG. 7A is a schematic sectional view of a method for manufacturing aconventional ferroelectric memory shown in process sequence.

FIG. 7B is a sectional view showing a step subsequent to that of FIG.7A.

FIG. 7C is a sectional view showing a step subsequent to that of FIG.7B.

FIG. 7D is a sectional view showing a step subsequent to that of FIG.7C.

FIG. 7E is a sectional view showing a step subsequent to that of FIG.7D.

FIG. 7F is a sectional view showing a step subsequent to that of FIG.7E.

FIG. 7G is a sectional view showing a step subsequent to that of FIG.7F.

FIG. 7H is a sectional view showing a step subsequent to that of FIG.7G.

MODES FOR CARRYING OUT THE INVENTION

Embodiments of the present invention will be hereinafter described inmore detail with reference to the accompanying drawings.

FIG. 1 is a schematic plan view of a ferroelectric memory according to afirst embodiment of the present invention. FIG. 2 is a sectional view ofthe ferroelectric memory of FIG. 1 along cutting-plane line II-II.

The ferroelectric memory 1 serving as a semiconductor storage device isa nonvolatile memory capable of retaining its memory contents even whena power supply is turned off.

The ferroelectric memory 1 includes a P type silicon substrate 2 asshown in FIG. 2.

For example, a plurality of active regions 50, each of which has arectangular shape when viewed planarly, are formed on the siliconsubstrate 2. The outline of the active region 50 is shown by a heavyline in FIG. 1. The active regions 50 are arranged in a matrix manner soas to be arrayed in its longitudinal direction and in a directionperpendicular to the longitudinal direction.

Each of the active regions 50 has a plurality of memory cells (twomemory cells in this embodiment) each of which retains one-bitinformation. One of the memory cells is shown in FIG. 2.

Each memory cell has a 1T1C-type cell structure in which oneferroelectric capacitor (C) 18 and one MOSFET (T) 8 are arranged so asto have a stacked-layer relationship.

As shown in FIG. 2, in the active region 50 (i.e., in each memory cell),an N⁺ type drain region 3 and an N⁺ type source region 4 are formed witha gap therebetween at a surface part of the silicon substrate 2. Thesource region 4 is used as a region shared with the MOSFETs 8 of the twomemory cells, and is formed in the center part of the active region 50when viewed planarly. On the other hand, in correlation with the MOSFET8 of each memory cell, the drain region 3 is formed at one end of theactive region 50 and at the other end thereof when viewed planarly.

Additionally, a gate insulating film 5 that extends like a bridge fromthe drain region 3 to the source region 4 is formed on the surface ofthe silicon substrate 2. The gate insulating film 5 is made of, forexample, silicon oxide.

A gate electrode 6 made of, for example, polysilicon (i.e., dopedpolysilicon) doped with an impurity is formed on the gate insulatingfilm 5.

A sidewall 7 is formed on the side wall of the gate electrode 6 in sucha manner as to be in close contact therewith over its wholecircumference. The sidewall 7 is made of, for example, silicon oxide.

In this way, the ferroelectric memory 1 has the MOSFET 8 that includesthe gate electrode (i.e., metal) 6, the gate insulating film (i.e.,oxide) 5, and the silicon substrate (i.e., semiconductor) 2 includingthe drain region 3 and the source region 4.

A first insulating layer 9 is stacked on the silicon substrate 2. Thefirst insulating layer 9 is made of, for example, silicon oxide. Thethickness of the first insulating layer 9 is, for example, 0.4 to 0.9μm.

A drain contact hole 10 that leads from the upper surface 61 of thefirst insulating layer 9 to the drain region 3 is formed at a part ofthe first insulating layer 9 that faces the drain region 3.

A drain contact plug 14 made of a metallic material, such as tungsten,is embedded in the drain contact hole 10. The drain contact hole 10 isfilled with the drain contact plug 14 serving as a first metal pluguntil the upper surface 62 of the drain contact plug 14 becomes flushwith the upper surface 61 of the first insulating layer 9.

In the drain contact hole 10, a barrier film 12 is interposed betweenits inner surface (i.e., the side surface formed by the first insulatinglayer 9 and the bottom surface formed by the silicon substrate 2) andthe drain contact plug 14. The barrier film 12 is made of, for example,a conductive material (e.g., TiN, Ti, etc.) that contains titanium.

The electrically-conductive barrier film 12 is interposed therebetween,and, as a result, the drain contact plug 14 is brought into electriccontact with the drain region 3 via the barrier film 12.

In the first insulating layer 9, a source contact hole 11 that leadsfrom the upper surface 61 of the first insulating layer 9 to the sourceregion 4 is formed at a part of the first insulating layer 9 that facesthe source region 4.

A source contact plug 15 made of a metallic material, such as tungsten,is embedded in the source contact hole 11. The source contact hole 11 isfilled with the source contact plug 15 serving as a second metal pluguntil its upper surface 63 becomes flush with the upper surface 61 ofthe first insulating layer 9. The upper surface 63 of the source contactplug 15 is flush with the upper surface 61 of the first insulating layer9, and, as a result, the upper surface 63 of the source contact plug 15and the upper surface 62 of the drain contact plug 14 are flush witheach other.

In the source contact hole 11, a barrier film 13 is interposed betweenits inner surface (i.e., the side surface formed by the first insulatinglayer 9 and the bottom surface formed by the silicon substrate 2) andthe source contact plug 15. The barrier film 13 is made of, for example,a conductive material (e.g., TiN, Ti, etc.) that contains titanium.

The electrically-conductive barrier film 13 is interposed therebetween,and, as a result, the source contact plug 15 is brought into electriccontact with the source region 4 via the barrier film 13.

An interlayer insulating film 16 interposed between the first insulatinglayer 9 and a second insulating layer 24 (described later) is formed onthe first insulating layer 9. The thickness of the interlayer insulatingfilm 16 is smaller than that of the first insulating layer 9, and is,for example, 0.05 to 0.2 μm. An opening 17 by which the whole of theupper surface 62 of the drain contact plug 14 is exposed is formed at apart of the interlayer insulating film 16 that faces the drain contactplug 14.

The ferroelectric capacitor 18 is disposed on the opening 17 of theinterlayer insulating film 16, i.e., is disposed, when viewed planarly,at a position at which the ferroelectric capacitor 18 lies on the draincontact plug 14 and at which the ferroelectric capacitor 18 does not lieon the source contact plug 15.

The ferroelectric capacitor 18 includes a lower electrode 19, an upperelectrode 21, and a ferroelectric film 20 placed between the lowerelectrode 19 and the upper electrode 21.

The lower electrode 19 is made of a conductive material that contains anoble metal (specifically, Au-based material, Ag-based material,Pt-based material, Pd-based material, Rh-based material, Ir-basedmaterial, Ru-based material, and Os-based material). The thickness ofthe lower electrode 19 is, for example, 0.05 to 0.2 μm. The lowerelectrode 19 enters the opening 17, and is in contact with the uppersurface 62 of the drain contact plug 14. As a result, the lowerelectrode 19 is electrically connected to the drain region 3 via thedrain contact plug 14.

Like the lower electrode 19, the upper electrode 21 is made of aconductive material that contains a noble metal. The upper electrode 21has the same thickness (for example, 0.05 to 0.2 μm) as, for example,the lower electrode 19.

The ferroelectric film 20 is made of a ferroelectric material. Nospecific limitations are imposed on the ferroelectric material if theferroelectric material has properties capable of storing an electriccharge even when a voltage is not applied, and well-known materials,such as lead zirconate titanate (Pb(Zr,Ti)O₃:PZT), strontium bismuthtantalate (SrBi₂Ta₂O₉:SBT), bismuth lanthanum titanate(Bi,La)₄Ti₃O₁₂:BLT), and barium titanate (BaTiO₃), can be mentioned asthe ferroelectric material. The thickness of the ferroelectric film 20is, for example, 0.05 to 0.2 μm.

The ferroelectric capacitor 18 having a layered structure consisting ofthe lower electrode 19, the ferroelectric film 20, and the upperelectrode 21 is formed in, for example, a mesa shape (i.e., trapezoidalshape when viewed cross-sectionally). A side surface 64 of theferroelectric capacitor 18 is a steeply oblique surface that is inclinedat an inclination angle of “a” (for example, a=75 to 85°) with respectto a stacked-layer interface I located on the opening 17.

A TiN film 48 is stacked on the upper electrode 21 of the ferroelectriccapacitor 18.

A first hydrogen barrier film 22 made of Al₂O₃ (alumina) and a secondhydrogen barrier film 23 made of SiN (silicon nitride) are sequentiallystacked on the interlayer insulating film 16.

The second insulating layer 24 is stacked on the second hydrogen barrierfilm 23. The second insulating layer 24 is made of, for example, siliconoxide. The second insulating layer 24 has the same thickness (e.g., 0.4to 0.94 μm) as, for example, the first insulating layer 9.

The second insulating layer 24, the second hydrogen barrier film 23, andthe first hydrogen barrier film 22 have a PL wiring via-hole 25 thatpenetrates therethrough from the upper surface 65 of the secondinsulating layer 24 and that reaches the TiN film 48.

A PL wiring plug 29 made of a metallic material, such as tungsten, isembedded in the PL wiring via-hole 25. The PL wiring via-hole 25 isfilled with the PL wiring plug 29 until its upper surface 66 becomesflush with the upper surface 65 of the second insulating layer 24.

In the PL wiring via-hole 25, a barrier film 27 is interposed betweenits inner surface (i.e., the side surface formed by the secondinsulating layer 24 and the bottom surface formed by the TiN film 48)and the PL wiring plug 29. The barrier film 27 is made of, for example,a conductive material (for example, TiN, Ti, etc.) that containstitanium.

The electrically-conductive barrier film 27 is interposed therebetween,and, as a result, the PL wiring plug 29 is brought into electric contactwith the upper electrode 21 via the barrier film 27 and the TiN film 48.

The second insulating layer 24, the second hydrogen barrier film 23, andthe first hydrogen barrier film 22 have a BL wiring via-hole 26 thatpenetrates therethrough from the upper surface 65 of the secondinsulating layer 24 and that reaches the source contact plug 15.

A BL wiring plug 30 made of a metallic material, such as tungsten, isembedded in the BL wiring via-hole 26. The BL wiring via-hole 26 isfilled with the BL wiring plug 30 until its upper surface 67 becomesflush with the upper surface 65 of the second insulating layer 24.

In the BL wiring via-hole 26, a barrier film 28 is formed between itsinner surface (the side surface formed by the second insulating layer 24and the bottom surface formed by the source contact plug 15) and the BLwiring plug 30. The barrier film 28 is made of, for example, aconductive material (for example, TiN, Ti, etc.) that contains titanium.

The electrically-conductive barrier film 28 is interposed therebetween,and, as a result, the BL wiring plug 30 is brought into electric contactwith the source contact plug 15 via the barrier film 27.

A PL wiring 31 and a BL wiring 32 are formed on the second insulatinglayer 24.

The PL wiring 31 is a wiring to be connected to a plate line 40 of theferroelectric memory 1, and has a three-layer structure that consistsof, for example, a titanium layer 33 made of a conductive material thatcontains titanium, an aluminum layer 34 made of a conductive materialthat contains aluminum, and a titanium layer 35 made of a conductivematerial that contains titanium.

The BL wiring 32 is a wiring to be connected to a bit line 41 of theferroelectric memory 1, and has a three-layer structure that consistsof, for example, a titanium layer 36 made of a conductive material thatcontains titanium, an aluminum layer 37 made of a conductive materialthat contains aluminum, and a titanium layer 38 made of a conductivematerial that contains titanium.

The ferroelectric memory 1 is provided with a word line 39, the plateline 40, and the bit line 41.

The word line 39 extends in a direction perpendicular to thelongitudinal direction of the active region 50 at a position that faceseach channel region placed between the drain region 3 and the sourceregion 4. The word line 39 is connected to the gate electrode 6.

The plate line 40 extends in the direction perpendicular to thelongitudinal direction of the active region 50 above the upper electrode21. The plate line 40 is connected to the PL wiring 31.

The bit line 41 extends in the longitudinal direction of the activeregion 50 above the active region 50. The bit line 41 is connected tothe BL wiring 32.

A memory cell is selected by the word line 39, and a voltage is appliedbetween the bit line 41 and the plate line 40, and, as a result, theferroelectric capacitor 18 of the selected memory cell is polarized in adirection leading from the upper electrode 21 to the lower electrode 19or in a direction opposite to this direction. One-bit information (i.e.,information of 0 or 1) can be written onto this memory cell bydetermining this polarization direction.

On the other hand, in each memory cell, a pulse voltage is appliedbetween the upper electrode 21 and the lower electrode 19, and theone-bit information written onto that memory cell is determined by thepresence or absence of an electric current caused by a polarizationinversion of the ferroelectric capacitor 18, and, accordingly, thisinformation can be read.

FIG. 3A to FIG. 3J are schematic sectional views shown in processsequence of a method for manufacturing the ferroelectric memory of FIG.2.

In this manufacturing method, first, an N type impurity is injected intoa surface part of the silicon substrate 2, and, as a result, an N⁺ typedrain region 3 and an N⁺ type source region 4 are formed as shown inFIG. 3A. Thereafter, a thermally-oxidized film (not shown) is formed onthe silicon substrate 2 by thermal oxidation treatment, and is subjectedto patterning. As a result, a gate insulating film 5 that extends like abridge between the drain region 3 and the source region 4 is formed.

Thereafter, by the CVD method, polysilicon (i.e., doped polysilicon)doped with an impurity is deposited on the silicon substrate 2 havingthe gate insulating film 5, and is subjected to patterning. As a result,a gate electrode 6 is formed on the gate insulating film 5. Thereafter,by the CVD method, silicon oxide is deposited on the silicon substrate2, and is subjected to etchback. As a result, a sidewall 7 thatsurrounds the side wall of the gate electrode 6 is formed. In this way,a MOSFET 8 having the gate electrode 6 (Metal), the gate insulating film5 (Oxide), and the silicon substrate 2 (Semiconductor) including thedrain region 3 and the source region 4 is formed as shown in FIG. 3A.

After forming the MOSFET 8, silicon oxide is deposited on the siliconsubstrate 2 by the CVD method, and, as a result, a first insulatinglayer 9 is formed. Thereafter, by a well-known patterning technique, thefirst insulating layer 9 is subjected to patterning, and, as a result, adrain contact hole 10 and a source contact hole 11 are simultaneouslyformed in the first insulating layer 9.

Thereafter, by the sputtering method, a conductive material thatcontains titanium is deposited such that the whole of the inner surfaceof the drain contact hole 10 and that of the source contact holes 11 arecovered therewith and such that the upper surface 61 of the firstinsulating layer 9 is covered therewith. Thereafter, by the CVD method,tungsten is deposited such that the drain contact hole 10 and the sourcecontact hole 11 are filled therewith. Thereafter, the conductivematerial that contains titanium and the tungsten material are polishedby CMP treatment until the upper surface of the tungsten materialdeposited thereon and the upper surface 61 of the first insulating layer9 become flush with each other. In this way, a barrier film 12 isformed, and a drain contact plug 14 embedded in the drain contact hole10 is formed via the barrier film 12 as shown in FIG. 3A. Furthermore, abarrier film 13 is formed, and a source contact plug 15 embedded in thesource contact hole 11 is formed simultaneously with the drain contactplug 14 via the barrier film 13. The upper surface 62 of the draincontact plug 14 and the upper surface 63 of the source contact plug 15become flush with the upper surface 61 of the first insulating layer 9.

Thereafter, by the CVD method, silicon oxide is deposited on the firstinsulating layer 9, and, as a result, an interlayer insulating film 16is stacked on the first insulating layer 9 as shown in FIG. 3B.

Thereafter, a part of the interlayer insulating film 16 that faces thedrain contact plug 14 is removed by a well-known patterning technique.As a result, an opening 17 by which the upper surface 62 of the draincontact plug 14 is exposed is formed as shown in FIG. 3C.

Thereafter, by the sputtering method, a lower conductive material film42 made of a conductive material that contains a noble metal, aferroelectric material film 43 made of a ferroelectric material, and anupper conductive material film 44 made of a conductive material thatcontains a noble metal are sequentially deposited on the interlayerinsulating film 16, and, as a result, a deposit structure 45 is formedas shown in FIG. 3D.

Thereafter, a hard mask 46 having heat-resisting properties (forexample, TiN) is formed at a part of the deposit structure 45 located onthe opening 17 (i.e., a part located on the drain contact plug 14).Thereafter, the deposit structure 45 is etched vertically with respectto its stacked-layer interface at an etching temperature of, forexample, 300° C. or more, and, preferably, at an etching temperature of350 to 450° C. via the hard mask 46. As a result, in such a way that thepart of the deposit structure 45 located on the opening 17 remainsthere, the other parts of the deposit structure 45 except the remainingpart are removed. In this way, the mesa-shaped ferroelectric capacitor18 having the side surface 64 that is inclined at an inclination angleof “a” (for example, a=75 to 85°) with respect to the stacked-layerinterface I on the opening 17 is formed as shown in FIG. 3E. As shown inFIG. 3F, the hard mask 46 that has been thinned by etching remains asthe TiN film 48 on the upper electrode 21 of the ferroelectric capacitor18.

Thereafter, Al₂O₃ (alumina) is deposited on the interlayer insulatingfilm 16 by the sputtering method, and SiN (silicon nitride) is depositedthereon by the PECVD method. As a result, as shown in FIG. 3F, a firsthydrogen barrier film 22 and a second hydrogen barrier film 23 areformed such that the interlayer insulating film 16 is covered therewithand such that the whole of the surface of the ferroelectric capacitor 18is covered therewith.

Thereafter, by the CVD method, a second insulating layer 24 made ofsilicon oxide is stacked on the second hydrogen barrier film 23 as shownin FIG. 3G. At this time, the whole of the surface of the ferroelectriccapacitor 18 is covered with the first hydrogen barrier film 22 and thesecond hydrogen barrier film 23, and therefore the reduction of oxygenin the ferroelectric film 20 by carrier gas can be prevented even if theCVD method in which H (hydrogen) is used as the carrier gas is employedas a method for forming the second insulating layer 24. Therefore, adeterioration in properties of the ferroelectric film 20 can berestrained.

Thereafter, the second insulating layer 24 is polished by CMP treatment,and the surface of the second insulating layer 24 is flattened.Thereafter, as shown in FIG. 3H, the second insulating layer 24, thesecond hydrogen barrier film 23, and the first hydrogen barrier film 22are subjected to patterning by a well-known patterning technique, and,as a result, a PL wiring via-hole 25 by which the TiN film 48 is exposedand a BL wiring via-hole 26 by which the upper surface 63 of the sourcecontact plug 15 is exposed are formed simultaneously.

Thereafter, by the sputtering method, a conductive material thatcontains titanium is deposited such that the inner surface of the PLwiring via-hole 25 and that of the BL wiring via-hole 26 are coveredtherewith and such that the upper surface 65 of the second insulatinglayer 24 is covered therewith. Thereafter, by the CVD method, tungstenis deposited such that the PL wiring via-hole 25 and the BL wiringvia-hole 26 are filled therewith. Thereafter, the conductive materialthat contains titanium and the tungsten material are polished by CMPtreatment until the upper surface of the tungsten material and the uppersurface 65 of the second insulating layer 24 become flush with eachother. In this way, a barrier film 27 is formed, and a PL wiring plug 29embedded in the PL wiring via-hole 25 is formed via the barrier film 27as shown in FIG. 3I. Furthermore, a barrier film 28 is formed, and a BLwiring plug embedded in the BL wiring via-hole 26 is formedsimultaneously with the PL wiring plug 29 via the barrier film 28. Theupper surface 66 of the PL wiring plug 29 and the upper surface 67 ofthe BL wiring plug 30 become flush with the upper surface 65 of thesecond insulating layer 24.

Thereafter, by the sputtering method, a conductive material thatcontains titanium, a conductive material that contains aluminum, and aconductive material that contains titanium are stacked on the secondinsulating layer 24, and are subjected to patterning. As a result, a PLwiring 31 (i.e., a wiring that has a three-layer structure consisting ofa titanium layer 33, an aluminum layer 34, and a titanium layer 35) thatis brought into electric contact with the PL wiring plug 29 and a BLwiring 32 (i.e., a wiring that has a three-layer structure consisting ofa titanium layer 36, an aluminum layer 37, and a titanium layer 38) thatis brought into electric contact with the BL wiring plug 30 aresimultaneously formed as shown in FIG. 3J.

Thereafter, the word line 39 is connected to the gate electrode 6, andthe plate line 40 is connected to the PL wiring 31, and the bit line 41is connected to the BL wiring 32.

In this way, a ferroelectric memory 1 including the ferroelectriccapacitor 18 can be obtained as shown in FIG. 3J.

As described above, in the above-mentioned manufacturing method, thedrain contact plug 14 and the source contact plug 15 are embedded in thefirst insulating layer 9, and then the interlayer insulating film 16 isstacked on the first insulating layer 9. Thereafter, the interlayerinsulating film 16 is subjected to patterning, and the part of theinterlayer insulating film 16 that faces the drain contact plug 14 isremoved, and, as a result, the opening 17 is formed. As a result, thedrain contact plug 14 is exposed via the opening 17 of the interlayerinsulating film 16, whereas the source contact plug 15 is covered withthe interlayer insulating film 16.

Under this condition, the deposit structure 45 is formed on theinterlayer insulating film 16, and the hard mask 46 havingheat-resisting properties is formed at the part of the deposit structure45 (i.e., the part thereof on the opening 17). Thereafter, the depositstructure 45 is etched via the hard mask 46, and, as a result, theferroelectric capacitor 18 is formed.

When the deposit structure 45 is etched, the source contact plug 15 iscovered with the interlayer insulating film 16. Therefore, as describedabove, protection given by the interlayer insulating film 16 makes itpossible to prevent the source contact plug 15 from being abnormallyetched even if the deposit structure 45 is etched at a high temperatureof 300° C. or more. As a result, it is possible to inhibit theoccurrence of an electrical conduction failure between the sourcecontact plug 15 and the BL wiring plug 30 connected to this sourcecontact plug 15, and it is possible to restrain a decrease inreliability.

Additionally, the deposit structure 45 is etched at a high temperature,and therefore the side surface 64 of the ferroelectric capacitor 18 canbe formed to be a steeply oblique surface with respect to thestacked-layer interface I located on the opening 17. As a result, thearea of the ferroelectric capacitor 18 can be reduced, and therefore theferroelectric memory 1 can be miniaturized.

Additionally, with regard to the formation of the drain contact plug 14and the source contact plug 15, the drain contact hole 10 and the sourcecontact hole 11 are formed simultaneously. Thereafter, tungsten isdeposited such that these contact holes are filled therewith, and isthen polished by CMP treatment until the upper surface of the tungstenmaterial and the upper surface 61 of the first insulating layer 9 becomeflush with each other. The drain contact plug 14 and the source contactplug 15 whose upper surfaces 62 and 63, respectively, are made flushwith each other by this polishing treatment are formed simultaneously(see FIG. 3A).

A plurality of steps of forming the drain contact plug 14 and aplurality of steps of forming the source contact plug 15 are performedin parallel with each other as described above, and therefore themanufacturing process of the ferroelectric memory 1 can be simplified.

FIG. 4 is a schematic plan view of a ferroelectric memory according to asecond embodiment of the present invention. FIG. 5 is a sectional viewof the ferroelectric memory of FIG. 4 along cutting-plane line V-V.

A ferroelectric memory 101 serving as a semiconductor storage device isa nonvolatile memory capable of retaining its memory contents even whena power supply is turned off.

The ferroelectric memory 101 includes a P type silicon substrate 102 asshown in FIG. 5.

For example, a plurality of active regions 150, each of which has arectangular shape when viewed planarly, are formed on the siliconsubstrate 102. The outline of the active region 150 is shown by a heavyline in FIG. 4. The active regions 150 are arranged in a matrix mannerso as to be arrayed in its longitudinal direction and in a directionperpendicular to the longitudinal direction.

Each of the active regions 150 has a plurality of memory cells (twomemory cells in this embodiment) each of which retains one-bitinformation. One of the memory cells is shown in FIG. 5.

Each memory cell has a 1T1C-type cell structure in which oneferroelectric capacitor (C) 118 and one MOSFET (T) 108 are arranged soas to have a stacked-layer relationship.

As shown in FIG. 5, in the active region 150 (i.e., in each memorycell), an N⁺ type drain region 103 and an N type source region 104 areformed with a gap therebetween at a surface part of the siliconsubstrate 102. The source region 104 is used as a region shared with theMOSFETs 108 of the two memory cells, and is formed in the center part ofthe active region 150 when viewed planarly. On the other hand, incorrelation with the MOSFET 108 of each memory cell, the drain region103 is formed at one end of the active region 150 and at the other endthereof when viewed planarly.

Additionally, a gate insulating film 105 that extends like a bridge fromthe drain region 103 to the source region 104 is formed on the surfaceof the silicon substrate 102. The gate insulating film 105 is made of,for example, silicon oxide.

A gate electrode 106 made of, for example, polysilicon (i.e., dopedpolysilicon) doped with an impurity is formed on the gate insulatingfilm 105.

A sidewall 107 is formed on the side wall of the gate electrode 106 insuch a manner as to be in close contact therewith over its wholecircumference. The sidewall 107 is made of, for example, silicon oxide.

In this way, the ferroelectric memory 101 has the MOSFET 108 thatincludes the gate electrode (i.e., metal) 106, the gate insulating film(i.e., oxide) 105, and the silicon substrate (i.e., semiconductor) 102including the drain region 103 and the source region 104.

A first insulating layer 109 is stacked on the silicon substrate 102.The first insulating layer 109 is made of, for example, silicon oxide.The thickness of the first insulating layer 109 is, for example, 0.4 to0.9 μm.

A drain contact hole 110 that leads from the upper surface 161 of thefirst insulating layer 109 to the drain region 103 is formed at a partof the first insulating layer 109 that faces the drain region 103.

A drain contact plug 114 is embedded in the drain contact hole 110. Thedrain contact plug 114 includes a main plug 151 buried to a middle partin the depth direction of the drain contact hole 110 and a cap plug 152with which the upper surface 168 of the main plug 151 is covered andwith which the drain contact hole 110 is filled until its upper surface162 becomes flush with the upper surface 161 of the first insulatinglayer 109.

The main plug 151 serving as a first metal plug is made of, for example,a metallic material such as tungsten.

The cap plug 152 serving as an electrically-conductive cap is made of aconductive material, such as conductive nitride (e.g., TiN (titaniumnitride), TaN (tantalum nitride), WN (tungsten nitride), etc.),polysilicon (doped polysilicon) doped with an impurity, or carbon, whichhas an etching selection ratio with respect to the material for a lowerelectrode 119 and that of an upper electrode 121 described later.

In the drain contact hole 110, a barrier film 112 is interposed betweenits inner surface (i.e., the side surface formed by the first insulatinglayer 109 and the bottom surface formed by the silicon substrate 102)and the drain contact plug 114. The barrier film 112 is made of, forexample, a conductive material (e.g., TiN, Ti, etc.) that containstitanium.

The electrically-conductive barrier film 112 is interposed therebetween,and, as a result, the drain contact plug 114 is brought into electriccontact with the drain region 103 via the barrier film 112.

A source contact hole 111 that leads from the upper surface 161 of thefirst insulating layer 109 to the source region 104 is formed at a partof the first insulating layer 109 that faces the source region 104.

A source contact plug 115 is embedded in the source contact hole 111.The source contact plug 115 includes a main plug 153 buried to a middlepart in the depth direction of the source contact hole 111 and a capplug 154 with which the upper surface 169 of the main plug 153 iscovered and with which the source contact hole 111 is filled until itsupper surface 163 becomes flush with the upper surface 161 of the firstinsulating layer 109. The upper surface 163 of the cap plug 154 is flushwith the upper surface 161 of the first insulating layer 109, and, as aresult, the upper surface of the source contact plug 115 (i.e., theupper surface 163 of the cap plug 154) and the upper surface of thedrain contact plug 114 (i.e., the upper surface 162 of the cap plug 152)are flush with each other.

The main plug 153 serving as a second metal plug is made of, forexample, a metallic material such as tungsten.

The cap plug 154 serving as an electrically-conductive cap is made of,for example, the same material as the above-mentioned cap plug 152.

In the source contact hole 111, a barrier film 113 is interposed betweenits inner surface (i.e., the side surface formed by the first insulatinglayer 109 and the bottom surface formed by the silicon substrate 102)and the source contact plug 115. The barrier film 113 is made of, forexample, a conductive material (e.g., TiN, Ti, etc.) that containstitanium.

The conductive barrier film 113 is interposed therebetween, and, as aresult, the source contact plug 115 is brought into electric contactwith the source region 104 via the barrier film 113.

The ferroelectric capacitor 118 is disposed on the first insulatinglayer 109 at a part of the first insulating layer 109 that faces thedrain contact plug 114. In other words, the ferroelectric capacitor 118is disposed, when viewed planarly, at a position at which theferroelectric capacitor 118 lies on the drain contact plug 114 and atwhich the ferroelectric capacitor 118 does not lie on the source contactplug 115.

The ferroelectric capacitor 118 includes a lower electrode 119, an upperelectrode 121, and a ferroelectric film 120 placed between the lowerelectrode 119 and the upper electrode 121.

The lower electrode 119 is made of a conductive material that contains anoble metal (specifically, Au-based material, Ag-based material,Pt-based material, Pd-based material, Rh-based material, Ir-basedmaterial, Ru-based material, and Os-based material). The thickness ofthe lower electrode 119 is, for example, 0.05 to 0.25 μm. The lowerelectrode 119 is in contact with the upper surface 162 of the draincontact plug 114. As a result, the lower electrode 119 is electricallyconnected to the drain region 103 via the drain contact plug 114.

Like the lower electrode 119, the upper electrode 121 is made of aconductive material that contains a noble metal. The upper electrode 121has the same thickness (for example, 0.05 to 0.25 μm) as, for example,the lower electrode 119.

The ferroelectric film 120 is made of a ferroelectric material. Nospecific limitations are imposed on the ferroelectric material if theferroelectric material has properties capable of storing an electriccharge even when a voltage is not applied, and well-known materials,such as lead zirconate titanate (Pb(Zr,Ti)O₃:PZT), strontium bismuthtantalate (SrBi₂Ta₂O₉:SBT), bismuth lanthanum titanate(Bi,La)₄TiO₃O₁₂:BLT), and barium titanate (BaTiO₃), can be mentioned asthe ferroelectric material. The thickness of the ferroelectric film 120is, for example, 0.1 to 0.2 μm.

The ferroelectric capacitor 118 having a layered structure consisting ofthe lower electrode 119, the ferroelectric film 120, and the upperelectrode 121 is formed in, for example, a mesa shape (i.e., trapezoidalshape when viewed cross-sectionally). A side surface 164 of theferroelectric capacitor 118 is a steeply oblique surface that isinclined at an inclination angle of “a” (for example, a=75 to 85°) withrespect to its stacked-layer interface I.

A TiN film 148 is stacked on the upper electrode 121 of theferroelectric capacitor 118.

A first hydrogen barrier film 122 made of Al₂O₃ (alumina) and a secondhydrogen barrier film 123 made of SiN (silicon nitride) are sequentiallystacked on the first insulating layer 109.

A second insulating layer 124 is stacked on the second hydrogen barrierfilm 123. The second insulating layer 124 is made of, for example,silicon oxide. The second insulating layer 124 has the same thickness(e.g., 0.4 to 0.9 μm) as, for example, the first insulating layer 109.

The second insulating layer 124, the second hydrogen barrier film 123,and the first hydrogen barrier film 122 have a PL wiring via-hole 125that penetrates therethrough from the upper surface 165 of the secondinsulating layer 124 and that reaches the TiN film 148.

A PL wiring plug 129 made of a metallic material, such as tungsten, isembedded in the PL wiring via-hole 125. The PL wiring via-hole 125 isfilled with the PL wiring plug 129 until its upper surface 166 becomesflush with the upper surface 165 of the second insulating layer 124.

In the PL wiring via-hole 125, a barrier film 127 is interposed betweenits inner surface (i.e., the side surface formed by the secondinsulating layer 124 and the bottom surface formed by the TiN film 148)and the PL wiring plug 129. The barrier film 127 is made of, forexample, a conductive material (for example, TiN, Ti, etc.) thatcontains titanium.

The conductive barrier film 127 is interposed therebetween, and, as aresult, the PL wiring plug 129 is brought into electric contact with theupper electrode 121 via the barrier film 127 and the TiN film 148.

The second insulating layer 124, the second hydrogen barrier film 123,and the first hydrogen barrier film 122 have a BL wiring via-hole 126that penetrates therethrough from the upper surface 165 of the secondinsulating layer 124 and that reaches the source contact plug 115.

A BL wiring plug 130 made of a metallic material, such as tungsten, isembedded in the BL wiring via-hole 126. The BL wiring via-hole 126 isfilled with the BL wiring plug 130 until its upper surface 167 becomesflush with the upper surface 165 of the second insulating layer 124.

In the BL wiring via-hole 126, a barrier film 128 is formed between itsinner surface (the side surface formed by the second insulating layer124 and the bottom surface formed by the source contact plug 115) andthe BL wiring plug 130. The barrier film 128 is made of, for example, aconductive material (for example, TiN, Ti, etc.) that contains titanium.

The conductive barrier film 128 is interposed therebetween, and, as aresult, the BL wiring plug 130 is brought into electric contact with thesource contact plug 115 via the barrier film 127.

A PL wiring 131 and a BL wiring 132 are formed on the second insulatinglayer 124.

The PL wiring 131 is a wiring to be connected to a plate line 140 of theferroelectric memory 101, and has a three-layer structure that consistsof, for example, a titanium layer 133 made of a conductive material thatcontains titanium, an aluminum layer 134 made of a conductive materialthat contains aluminum, and a titanium layer 135 made of a conductivematerial that contains titanium.

The BL wiring 132 is a wiring to be connected to a bit line 141 of theferroelectric memory 101, and has a three-layer structure that consistsof, for example, a titanium layer 136 made of a conductive material thatcontains titanium, an aluminum layer 137 made of a conductive materialthat contains aluminum, and a titanium layer 138 made of a conductivematerial that contains titanium.

The ferroelectric memory 101 is provided with a word line 139, the plateline 140, and the bit line 141.

The word line 139 extends in a direction perpendicular to thelongitudinal direction of the active region 150 at a position that faceseach channel region placed between the drain region 103 and the sourceregion 104. The word line 139 is connected to the gate electrode 106.

The plate line 140 extends in the direction perpendicular to thelongitudinal direction of the active region 150 above the upperelectrode 121. The plate line 140 is connected to the PL wiring 131.

The bit line 141 extends in the longitudinal direction of the activeregion 150 above the active region 150. The bit line 141 is connected tothe BL wiring 132.

A memory cell is selected by the word line 139, and a voltage is appliedbetween the bit line 141 and the plate line 140, and, as a result, theferroelectric capacitor 118 of the selected memory cell is polarized ina direction leading from the upper electrode 121 to the lower electrode119 or in a direction opposite to this direction. One-bit information(i.e., information of 0 or 1) can be written onto this memory cell bydetermining this polarization direction.

On the other hand, in each memory cell, a pulse voltage is appliedbetween the upper electrode 121 and the lower electrode 119, and theone-bit information written onto that memory cell is determined by thepresence or absence of an electric current caused by a polarizationinversion of the ferroelectric capacitor 118, and, accordingly, thisinformation can be read.

FIG. 6A to FIG. 6K are schematic sectional views shown in processsequence of a method for manufacturing the ferroelectric memory of FIG.5.

In this manufacturing method, first, an N type impurity is injected intoa surface part of the silicon substrate 102, and, as a result, an N⁺type drain region 103 and an N⁺ type source region 104 are formed asshown in FIG. 6A. Thereafter, a thermally-oxidized film (not shown) isformed on the silicon substrate 102 by thermal oxidation treatment, andis subjected to patterning. As a result, a gate insulating film 105 thatextends like a bridge between the drain region 103 and the source region104 is formed.

Thereafter, by the CVD method, polysilicon (i.e., doped polysilicon)doped with an impurity is deposited on the silicon substrate 102 havingthe gate insulating film 105, and is subjected to patterning. As aresult, a gate electrode 106 is formed on the gate insulating film 105.Thereafter, by the CVD method, silicon oxide is deposited on the siliconsubstrate 102, and is subjected to etchback. As a result, a sidewall 107that surrounds the side wall of the gate electrode 106 is formed. Inthis way, a MOSFET 108 having the gate electrode 106 (Metal), the gateinsulating film 105 (Oxide), and the silicon substrate 102(Semiconductor) including the drain region 103 and the source region 104is formed as shown in FIG. 6A.

After forming the MOSFET 108, silicon oxide is deposited on the siliconsubstrate 102 by the CVD method, and, as a result, a first insulatinglayer 109 is formed. Thereafter, by a well-known patterning technique,the first insulating layer 109 is subjected to patterning, and, as aresult, a drain contact hole 110 and a source contact hole 111 aresimultaneously formed in the first insulating layer 109.

Thereafter, by the sputtering method, a conductive material thatcontains titanium is deposited such that the whole of the inner surfaceof the drain contact hole 110 and that of the source contact hole 111are covered therewith and such that the upper surface 161 of the firstinsulating layer 109 is covered therewith. Thereafter, by the CVDmethod, tungsten is deposited such that the drain contact hole 110 andthe source contact hole 111 are filled therewith. Thereafter, theconductive material that contains titanium and the tungsten material arepolished by CMP treatment until the upper surface of the tungstenmaterial deposited thereon and the upper surface 161 of the firstinsulating layer 109 become flush with each other. In this way, abarrier film 112 is formed, and a drain-located metal plug 116 embeddedin the drain contact hole 110 is formed via the barrier film 112 asshown in FIG. 6A. Furthermore, a barrier film 113 is formed, and asource-located metal plug 117 embedded in the source contact hole 111 isformed simultaneously with the drain-located metal plug 116 via thebarrier film 113.

Thereafter, by a well-known etching technique, an upper part of thedrain-located metal plug 116 and an upper part of the source-locatedmetal plug 117 are removed. As a result, the main plug 151 located onthe side of the drain region and the main plug 153 located on the sideof the source region which are buried to a middle part of the draincontact hole 110 and a middle part of the source contact hole 111,respectively, are formed as shown in FIG. 6B.

Thereafter, as shown in FIG. 6C, a cap material 147 that is a materialused for the cap plug 152 and for the cap plug 154 is deposited suchthat a space of the drain contact hole 110 and a space of the sourcecontact hole 111 remaining on the main plug 151 and the main plug 153,respectively, are filled therewith and such that the upper surface 161of the first insulating layer 109 is covered therewith by the sputteringmethod.

Thereafter, the cap material 147 is polished by CMP treatment until theupper surface of the cap material 147 deposited thereon and the uppersurface 161 of the first insulating layer 109 become flush with eachother. In this way, the cap plug 152 with which the upper surface 168 ofthe main plug 151 is covered and the cap plug 154 with which the uppersurface 169 of the main plug 153 is covered are simultaneously formed asshown in FIG. 6D. As a result, the drain contact plug 114 and the sourcecontact plug 115 that are embedded in the drain contact hole 110 and thesource contact hole 111 via the barrier films 112 and 113, respectively,are formed simultaneously.

Thereafter, by the sputtering method, a lower conductive material film142 made of a conductive material that contains a noble metal, aferroelectric material film 143 made of a ferroelectric material, and anupper conductive material film 144 made of a conductive material thatcontains a noble metal are sequentially deposited on the firstinsulating layer 109, and, as a result, a deposit structure 145 isformed as shown in FIG. 6E.

Thereafter, a hard mask 146 having heat-resisting properties (forexample, TiN) is formed at a part of the deposit structure 145 locatedon the drain contact plug 114. Thereafter, the deposit structure 145 isetched vertically with respect to its stacked-layer interface at anetching temperature of, for example, 300° C. or more, and, preferably,at an etching temperature of 350 to 450° C. via the hard mask 146. As aresult, in such a manner that the part of the deposit structure 145located on the drain contact plug 114 remains there, the other parts ofthe deposit structure 145 except the remaining part are removed. In thisway, the mesa-shaped ferroelectric capacitor 118 having the side surface164 that is inclined at an inclination angle of “a” (for example, a=75to 85°) with respect to the stacked-layer interface I is formed as shownin FIG. 6F. As shown in FIG. 6G, the hard mask 146 that has been thinnedby etching remains as the TiN film 148 on the upper electrode 121 of theferroelectric capacitor 118.

Thereafter, Al₂O₃ (alumina) is deposited on the first insulating layer109 by the sputtering method, and SiN (silicon nitride) is depositedthereon by the PECVD method. As a result, as shown in FIG. 6G, a firsthydrogen barrier film 122 and a second hydrogen barrier film 123 areformed such that the first insulating layer 109 is covered therewith andsuch that the whole of the surface of the ferroelectric capacitor 118 iscovered therewith.

Thereafter, by the CVD method, a second insulating layer 124 made ofsilicon oxide is stacked on the second hydrogen barrier film 123 asshown in FIG. 6H. At this time, the whole of the surface of theferroelectric capacitor 118 is covered with the first hydrogen barrierfilm 122 and the second hydrogen barrier film 123, and therefore thereduction of oxygen in the ferroelectric film 120 by carrier gas can beprevented even if the CVD method in which H (hydrogen) is used as thecarrier gas is employed as a method for forming the second insulatinglayer 124. Therefore, a deterioration in properties of the ferroelectricfilm 120 can be restrained.

Thereafter, the second insulating layer 124 is polished by CMPtreatment, and the surface of the second insulating layer 124 isflattened. Thereafter, as shown in FIG. 6I, the second insulating layer124, the second hydrogen barrier film 123, and the first hydrogenbarrier film 122 are subjected to patterning by a well-known patterningtechnique, and, as a result, a PL wiring via-hole 125 by which the TiNfilm 148 is exposed and a BL wiring via-hole 126 by which the uppersurface 163 of the source contact plug 115 is exposed are formedsimultaneously.

Thereafter, by the sputtering method, a conductive material thatcontains titanium is deposited such that the inner surface of the PLwiring via-hole 125 and that of the BL wiring via-hole 126 are coveredtherewith and such that the upper surface 165 of the second insulatinglayer 124 is covered therewith. Thereafter, by the CVD method, tungstenis deposited such that the PL wiring via-hole 125 and the BL wiringvia-hole 126 are filled therewith. Thereafter, the conductive materialthat contains titanium and the tungsten material are polished by CMPtreatment until the upper surface of the tungsten material depositedthereon and the upper surface 165 of the second insulating layer 124become flush with each other. In this way, a barrier film 127 is formed,and a PL wiring plug 129 embedded in the PL wiring via-hole 125 isformed via the barrier film 127 as shown in FIG. 6J. Furthermore, abarrier film 128 is formed, and a BL wiring plug 130 embedded in the BLwiring via-hole 126 is formed simultaneously with the PL wiring plug 129via the barrier film 128. The upper surface 166 of the PL wiring plug129 and the upper surface 167 of the BL wiring plug 130 become flushwith the upper surface 165 of the second insulating layer 124.

Thereafter, by the sputtering method, a conductive material thatcontains titanium, a conductive material that contains aluminum, and aconductive material that contains titanium are stacked on the secondinsulating layer 124, and are subjected to patterning. As a result, a PLwiring 131 (i.e., a wiring that has a three-layer structure consistingof a titanium layer 133, an aluminum layer 134, and a titanium layer135) that is brought into electric contact with the PL wiring plug 129and a BL wiring 132 (i.e., a wiring that has a three-layer structureconsisting of a titanium layer 136, an aluminum layer 137, and atitanium layer 138) that is brought into electric contact with the BLwiring plug 130 are formed as shown in FIG. 6K.

Thereafter, the word line 139 is connected to the gate electrode 106,and the plate line 140 is connected to the PL wiring 131, and the bitline 141 is connected to the BL wiring 132.

In this way, a ferroelectric memory 101 including the ferroelectriccapacitor 118 can be obtained as shown in FIG. 6K.

As described above, in the ferroelectric memory 101, the upper surface169 of the main plug 153 on the source side is covered with the cap plug154. The upper surface 169 of the main plug 153 is covered with the capplug 154, and, accordingly, is protected by the cap plug 154.

In the above-mentioned manufacturing method, after forming this cap plug154, the deposit structure 145 is formed on the first insulating layer109, and the hard mask 146 having heat-resisting properties is formed atthe part of the deposit structure 145 (i.e., the part thereof on thedrain contact plug 114). Thereafter, the deposit structure 145 is etchedvia the hard mask 146, and, as a result, the ferroelectric capacitor 118is formed.

When the deposit structure 145 is etched, the main plug 153 is coveredwith the cap plug 154. Additionally, as described above, the cap plug154 is made of a conductive material having an etching selection ratiowith respect to the lower electrode 119 and that of the upper electrode121. Therefore, protection given by the cap plug 154 makes it possibleto prevent the main plug 153 from being abnormally etched even if thedeposit structure 145 is etched at a high temperature of 300° C. or moreas mentioned above. As a result, it is possible to inhibit theoccurrence of an electrical conduction failure between the sourcecontact plug 115, which consists of the main plug 153 and the cap plug154, and the BL wiring plug 130 connected thereto, and it is possible torestrain a decrease in reliability.

Additionally, if the cap plug 154 is a conductive nitride, the etchingselection ratio can be set as a great value with respect to the lowerelectrode 119 and the upper electrode 121, and therefore the main plug153 can be effectively prevented from being abnormally etched.

Additionally, the deposit structure 145 is etched at a high temperature,and therefore the side surface 164 of the ferroelectric capacitor 118can be formed to be a steeply oblique surface with respect to thestacked-layer interface I. As a result, the area of the ferroelectriccapacitor 118 can be reduced, and therefore the ferroelectric memory 101can be miniaturized.

Additionally, the main plug 151 and the cap plug 152 are embedded in thedrain contact hole 110. Likewise, the main plug 153 and the cap plug 154are embedded in the source contact hole 111. In other words, a structureembedded in the drain contact hole 110 and a structure embedded in thesource contact hole 111 are identical with each other.

Therefore, with regard to the formation of the drain contact plug 114and the source contact plug 115, the drain contact hole 110 and thesource contact hole 111 are formed simultaneously, and the drain-locatedmetal plug 116 and the source-located metal plug 117 with which thesecontact holes are respectively filled are formed (see FIG. 6A).Thereafter, these plugs are etched, and, as a result, the main plug 151on the drain side and the main plug 153 on the source side aresimultaneously formed (see FIG. 6B).

Thereafter, the conductive cap material 147 with which a space of thedrain contact hole 110 and a space of the source contact hole 111remaining on the main plug 151 and the main plug 153, respectively, arefilled is deposited (see FIG. 6C), and is polished by CMP treatment. Thecap plug 152 on the drain side and the cap plug 154 on the source sideare simultaneously formed by this polishing treatment, and the draincontact plug 114 and the source contact plug 115 are formedsimultaneously (see FIG. 6D).

As described above, a step of forming the main plug 151 on the drainside and a step of forming the main plug 153 on the source side areperformed in parallel with each other, and, likewise, a step of formingthe cap plug 152 on the drain side with which the upper surface 168 ofthe main plug 151 is covered and a step of forming the cap plug 154 onthe source side with which the upper surface 169 of the main plug 153 iscovered are performed in parallel with each other. Therefore, themanufacturing process of the ferroelectric memory 101 can be simplified.

Although the embodiments of the present invention have been described asabove, the present invention can be embodied in other forms.

For example, it is permissible to employ a structure in which theconductivity type of each semiconductor part of the ferroelectricmemories 1 and 101 is reversed. In other words, in the ferroelectricmemories 1 and 101, the P type part may be an N type, and the N typepart may be a P type.

Additionally, the cell structure of each memory cell of theferroelectric memories 1 and 101 may be, for example, a 2T2C type ifthis cell structure allows a combination of a ferroelectric capacitorand a MOSFET.

Additionally, it is permissible for the drain contact plug 114 not tohave the cap plug 152. In this case, it is recommended to form the mainplug 151 by filling the drain contact hole 110 with a metallic material,such as tungsten, until its surface 168 and the upper surface 161 of thefirst insulating layer 109 become flush with each other.

Additionally, it is permissible for the source contact plug 115 not tohave the cap plug 154, and, in this case, it is recommended to cover theupper surface of the source contact plug 115 with, for example, amaterial film made of a conductive material having an etching selectionratio with respect to the lower electrode 119 and the upper electrode121.

Although the embodiments of the present invention have been described indetail, these embodiments are merely concrete examples used to clarifythe technical contents of the present invention, and therefore thepresent invention should not be limited to these concrete examples andshould not be interpreted thereby, and the spirit and the scope of thepresent invention are limited only by the appended claims.

This application is based on Japanese Patent Application No.2008-236647, filed in Japan Patent Office on Sep. 16, 2008, and JapanesePatent Application No. 2008-236648, filed in Japan Patent Office on Sep.16, 2008, the complete disclosure of which is hereby incorporated byreference.

DESCRIPTION OF SIGNS

1 . . . Ferroelectric memory, 9 . . . First insulating layer, 14 . . .Drain contact plug, 15 . . . Source contact plug, 16 . . . Interlayerinsulating film, 17 . . . Opening, 18 . . . Ferroelectric capacitor, 19. . . Lower electrode, 20 . . . Ferroelectric film, 21 . . . Upperelectrode, 42 . . . Lower conductive material film, 43 . . .Ferroelectric material film, 44 . . . Upper conductive material film, 45. . . Deposit structure, 62 . . . Upper surface, 63 . . . Upper surface,101 . . . Ferroelectric memory, 109 . . . First insulating layer, 110 .. . Drain contact hole, 111 . . . Source contact hole, 114 . . . Draincontact plug, 115 . . . Source contact plug, 116 . . . Drain-locatedmetal plug, 117 . . . Source-located metal plug, 118 . . . Ferroelectriccapacitor, 119 . . . Lower electrode, 120 . . . Ferroelectric film, 121. . . Upper electrode, 142 . . . Lower conductive material film, 143 . .. Ferroelectric material film, 144 . . . Upper conductive material film,145 . . . Deposit structure, 147 . . . Cap material, 161 . . . Uppersurface, 162 . . . Upper surface, 163 . . . Upper surface, 168 . . .Upper surface, 169 . . . Upper surface

The invention claimed is:
 1. A semiconductor storage device comprising:an insulating layer; a ferroelectric capacitor on the insulating layer,the ferroelectric capacitor including a lower electrode, a ferroelectricfilm, and an upper electrode; an interlayer insulating film formed onthe insulating layer, the interlayer insulating film having an openingat a part thereof at which the ferroelectric capacitor is disposed; afirst metal plug formed in the insulating layer and connected to thelower electrode via the opening of the interlayer insulating film; asecond metal plug embedded in the insulating layer outside theferroelectric capacitor when viewed planarly; and a hydrogen barrierfilm covering the ferroelectric capacitor and the interlayer insulatingfilm, wherein an upper surface of the interlayer insulating film is in alevel that is higher than a level of an upper surface of the first metalplug so that a step is provided between the upper surface of theinterlayer insulating film and the upper surface of the first metalplug, the lower electrode is formed on the upper surface of theinterlayer insulating film, the upper surface of the first metal plugand the step, and the upper surface of the interlayer insulating filmand the upper surface of the first metal plug are interlinked via acurved portion of the interlayer insulating film.
 2. The semiconductorstorage device according to claim 1, wherein the upper surface of thefirst metal plug and an upper surface of the second metal plug are flushwith each other.
 3. The semiconductor storage device according to claim1, wherein the hydrogen barrier film includes a SiN film.
 4. Thesemiconductor storage device according to claim 3, wherein the hydrogenbarrier film further includes an Al₂O₃ film formed under the SiN film.5. The semiconductor storage device according to claim 3, wherein thehydrogen barrier film further includes an Al₂O₃ film formed between theSiN film and the interlayer insulating film.
 6. The semiconductorstorage device according to claim 1, wherein the insulating layer is afirst insulating layer, and the semiconductor storage device furthercomprises a second insulating layer made of SiO₂ formed on the hydrogenbarrier film.
 7. The semiconductor storage device according to claim 1,further comprising a MOSFET embedded in the insulating layer.
 8. Thesemiconductor storage device according to claim 1, wherein each of theferroelectric film, the upper electrode and the lower electrode iscomposed of a material that is different than that of the hydrogenbarrier film.
 9. The semiconductor storage device according to claim 1,wherein the interlayer insulating film, the ferroelectric capacitor andthe hydrogen barrier film are stacked in that stated order along astraight line.
 10. The semiconductor storage device according to claim1, wherein the lower electrode touches each of the upper surface of theinterlayer insulating film, the upper surface of the first metal plugand the step.
 11. The semiconductor storage device according to claim 1,wherein a thickness of the lower electrode is 0.05 to 0.2 μm.
 12. Thesemiconductor storage device according to claim 1, wherein the stepincludes an inclination connecting the upper surface of the interlayerinsulating film with the upper surface of the first metal plug.
 13. Asemiconductor storage device comprising: an insulating layer; aferroelectric capacitor on the insulating layer, the ferroelectriccapacitor including a lower electrode, a ferroelectric film, and anupper electrode; an interlayer insulating film formed on the insulatinglayer, the interlayer insulating film having an opening at a partthereof at which the ferroelectric capacitor is disposed; a first metalplug formed in the insulating layer and connected to the lower electrodevia the opening of the interlayer insulating film; and a hydrogenbarrier film covering the ferroelectric capacitor and the interlayerinsulating film, wherein an upper surface of the interlayer insulatingfilm is in a level that is higher than a level of an upper surface ofthe first metal plug so that a step is provided between the uppersurface of the interlayer insulating film and the upper surface of thefirst metal plug, the lower electrode is formed on the upper surface ofthe interlayer insulating film, the upper surface of the first metalplug and the step, and the upper surface of the interlayer insulatingfilm and the upper surface of the first metal plug are interlinked via acurved portion of the interlayer insulating film.
 14. The semiconductorstorage device according to claim 13, wherein the lower electrodetouches each of the upper surface of the interlayer insulating film, theupper surface of the first metal plug and the step.
 15. A semiconductorstorage device comprising: an insulating layer; a ferroelectriccapacitor on the insulating layer, the ferroelectric capacitor includinga lower electrode, a ferroelectric film, and an upper electrode; aninterlayer insulating film formed on the insulating layer, theinterlayer insulating film having an opening at a part thereof at whichthe ferroelectric capacitor is disposed; a first metal plug formed inthe insulating layer and connected to the lower electrode via theopening of the interlayer insulating film; and a hydrogen barrier filmon the ferroelectric capacitor and the interlayer insulating film,wherein an upper surface of the interlayer insulating film is disposedin a position higher than a position of an upper surface of the firstmetal plug, the lower electrode being formed on the upper surface of theinterlayer insulating film, the upper surface of the first metal plugand between the upper surface of the interlayer insulating film and theupper surface of the first metal plug, and a curved portion of theinterlayer insulating film being between the upper surface of theinterlayer insulating film and the upper surface of the first metalplug.
 16. The semiconductor storage device according to claim 1, furthercomprising: a bit line extending above an active region; a first plateline and a second plate line extending such that the first and secondplate lines intersect with the bit line; and a first word line and asecond word line extending such that the first and second word linesintersect with the bit line; wherein the bit line intersects with thefirst plate line, the first word line, the second word line and thesecond plate line in that stated order.
 17. The semiconductor storagedevice according to claim 1, further comprising: a bit line extendingabove an active region; a second insulating layer on the interlayerinsulating film; a first plate line and a second plate line extendingsuch that the first and second plate lines intersect with the bit line;a first via embedded in the second insulating layer and electricallyconnected to the bit line; a second via embedded in the secondinsulating layer and electrically connected to the first plate line; anda third via embedded in the second insulating layer and electricallyconnected to the second plate line; wherein the first via, the secondvia and the third via are lined up in a straight line in a plan view.18. The semiconductor storage device according to claim 1, wherein thelower electrode has an approximately rectangular shape in a plan view.19. The semiconductor storage device according to claim 1, wherein thelower electrode has a plurality of sides extending linearly in a planview.
 20. The semiconductor storage device according to claim 1, whereinthe ferroelectric capacitor has an approximately rectangular shape in aplan view.
 21. The semiconductor storage device according to claim 1,wherein the ferroelectric capacitor has a plurality of sides extendinglinearly in a plan view.
 22. The semiconductor storage device accordingto claim 1, further comprising: a bit line extending above an activeregion; and a first via electrically connected to the bit line; whereinthe first via has a plurality of sides extending linearly in a planview.